Graded-size Si quantum dot ensembles for efficient light-emitting diodes

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Strengthening of Wood-like Materials via Densification and Nanoparticle Intercalation

Recently, several chemical and physical treatments were developed to improve different properties of wood. Such treatments are applicable to many types of cellulose-based materials. Densification leads the group in terms of mechanical results and comprises a chemical treatment followed by a thermo-compression stage. First, chemicals selectively etch the matrix of lignin and hemicellulose. Then, thermo-compression increases the packing density of cellulose microfibrils boosting mechanical performance. In this paper, in comparison with the state-of-the-art for wood treatments we introduce an additional nano-reinforcemeent on densified giant reed to further improve the mechanical performance. The modified nanocomposite materials are stiffer, stronger, tougher and show higher fire resistance. After the addition of nanoparticles, no relevant structural modification is induced as they are located in the gaps between cellulose microfibrils. Their peculiar positioning could increase the interfacial adhesion energy and improve the stress transfer between cellulose microfibrils. The presented process stands as a viable solution to introduce nanoparticles as new functionalities into cellulose-based natural materials

Room Temperature Chemoresistive Gas Sensor Based on Organic-Functionalized Graphene Oxide

In the wide palette of chemoresistive sensing materials, hybrid nanocomposites have quickly gained [...

Introduction : translingual work.

This issue both reflects and builds on the efforts prompted by the 2011 College English essay “Language Difference in Writing: Toward a Translingual Approach,” by Bruce Horner, Min-Zhan Lu, Jacqueline Jones Royster, and John Trimbur. Contributions to this symposium contextualize the emergence of a translingual approach, explore the tension and interconnections between a translingual approach and a variety of fields, and explore the viability of a translingual approach in light of existing academic structures

Chemoresistive Gas Sensor based on SiC Thick Film: Possible Distinctive Sensing Properties Between H2S and SO2☆

Commercially available nanosized powder of silicon carbide (named SiC), was thermally, morphologically and structurally characterized. After that, it was screen-printed onto alumina substrates in order to obtain thick films to be tested as functional material for conductometric gas sensors. Samples were exposed to SO2 and H2S, gases with high importance in many application fields, with the aim of verifying its capability of distinguishing between them. The characterization highlighted that this semiconductor type is selective for sulphur dioxide (SO2), in concentrations within the ppm range. This interesting result was found at high temperatures (600-800°C), useful for harsh environmental, and the measurements proved to be completely free from humidity interference. Applications of such a sensor could span many fields, since SO2 plays an important role in air pollution, industrial processes and wine making monitoring

The X-Gamma Imaging Spectrometer (XGIS) onboard THESEUS

A compact and modular X and gamma-ray imaging spectrometer (XGIS) has been designed as one of the instruments foreseen on-board the THESEUS mission proposed in response to the ESA M5 call. The experiment envisages the use of CsI scintillator bars read out at both ends by single-cell 25 mm 2 Silicon Drift Detectors. Events absorbed in the Silicon layer (lower energy X rays) and events absorbed in the scintillator crystal (higher energy X rays and Gamma-rays) are discriminated using the on-board electronics. A coded mask provides imaging capabilities at low energies, thus allowing a compact and sensitive instrument in a wide energy band (~2 keV up to ~20 MeV). The instrument design, expected performance and the characterization performed on a series of laboratory prototypes are discussed.Comment: To be published in the Proceedings of the THESEUS Workshop 2017 (http://www.isdc.unige.ch/theseus/workshop2017.html), Journal of the Italian Astronomical Society (Mem.SAIt), Editors L. Amati, E. Bozzo, M. Della Valle, D. Gotz, P. O'Brien. Details on the THESEUS mission concept can be found in the white paper Amati et al. 2017 (arXiv:171004638) and Stratta et al. 2017 (arXiv:1712.08153

Development and tests of a new prototype detector for the XAFS beamline at Elettra Synchrotron in Trieste

The XAFS beamline at Elettra Synchrotron in Trieste combines X-ray absorption spectroscopy and X-ray diffraction to provide chemically specific structural information of materials. It operates in the energy range 2.4-27 keV by using a silicon double reflection Bragg monochromator. The fluorescence measurement is performed in place of the absorption spectroscopy when the sample transparency is too low for transmission measurements or the element to study is too diluted in the sample. We report on the development and on the preliminary tests of a new prototype detector based on Silicon Drift Detectors technology and the SIRIO ultra low noise front-end ASIC. The new system will be able to reduce drastically the time needed to perform fluorescence measurements, while keeping a short dead time and maintaining an adequate energy resolution to perform spectroscopy. The custom-made silicon sensor and the electronics are designed specifically for the beamline requirements.Comment: Proceeding of the 6YRM 12th-14th Oct 2015 - L'Aquila (Italy). Accepted for publication on Journal of Physics: Conference Serie

Near infra-red light detection enhancement of plasmonic photodetectors

Nowadays numerous are the applications interested in exploiting near infrared light detection like LiDAR (at 850 - 950 nm wavelengths), NIR spectroscopy, quantum computation, and the detection of light from NIR emitting scintillators. Silicon based single photon avalanche diodes (SPAD) could be a valid device achieving high detection efficiency and high timing resolution. Moreover, they can provide single photon sensitivity in large areas if arranged in extended arrays named Silicon Photomultipliers (SiPM). Nevertheless, the Photon Detection Efficiency (PDE) of standard SiPMs in the NIR range is strongly limited by the relatively low Si absorption coefficient, leading to an absorption depth much larger than the typical active thickness of Si SPAD, i.e. 18 μm at 850 nm compared to some few μm’s. Hence, the performance of Si based detectors in NIR range is still inadequate for almost all the cited applications. A potential solution to overcome the limited Si absorption coefficient is to couple these photodetectors with a structure supporting highly confined light such as plasmonic oscillations, thus increasing the absorption. In recent years, the development in nanophotonic demonstrated that the interphase between metallic nanostructured and dielectric surface can support Surface Plasmon Polaritons (SPP) i.e. electrons collective oscillation highly confined along the thickness of the device. Some of these interesting nanostructured are: i) 1- and 2-dimensional gratings; ii) bullseye structures; iii) nano-pillars and nano-holes arrays. Among those, 1D and 2D metallic nanograting are the most promising structures considering their feasibility and possible integration with Si based photodetector and SiPM technologies. In this contribution, we investigated the integration of a bidimensional metallic plasmonic nanograting structure on state of art photodetectors (PDs). For ease of production and characterization, the test devices consisted of conventional Silicon photodiodes instead of a proper SPAD. The PDs have been produced at the facility of Fondazione Bruno Kessler (Trento, Italy) using a custom CMOS-like microfabrication process similar the one used for FBK-SiPM technology. The previous described metallic nanograting is directly fabricated on a PDs by i) Electron Beam Lithography (EBL), ii) silver deposition, and iii) lift-off. Afterwards, the quantum efficiency (QE) of the produced samples have been measured in (450-1100) nm range. The first results are promising with an enhancement of about 45% at 950 nm with respect to the reference PD without any plasmonic nanostructured on top

First results of a novel Silicon Drift Detector array designed for low energy X-ray fluorescence spectroscopy

We developed a trapezoidal shaped matrix with 8 cells of Silicon Drift Detectors (SDD) featuring a very low leakage current (below 180 pA/cm2 at 20 \ub0C) and a shallow uniformly implanted p+ entrance window that enables sensitivity down to few hundreds of eV. The matrix consists of a completely depleted volume of silicon wafer subdivided into 4 square cells and 4 half-size triangular cells. The energy resolution of a single square cell, readout by the ultra-low noise SIRIO charge sensitive preamplifier, is 158 eV FWHM at 5.9 keV and 0 \ub0C. The total sensitive area of the matrix is 231 mm2 and the wafer thickness is 450\u3bcm. The detector was developed in the frame of the INFN R&D project ReDSoX in collaboration with FBK, Trento. Its trapezoidal shape was chosen in order to optimize the detection geometry for the experimental requirements of low energy X-ray fluorescence (LEXRF) spectroscopy, aiming at achieving a large detection angle. We plan to exploit the complete detector at the TwinMic spectromicroscopy beamline at the Elettra Synchrotron (Trieste, Italy). The complete system, composed of 4 matrices, increases the solid angle coverage of the isotropic photoemission hemisphere about 4 times over the present detector configuration. We report on the layout of the SDD matrix and of the experimental set-up, as well as the spectroscopic performance measured both in the laboratory and at the experimental beamline. \ua9 2015 Elsevier B.V